Structure for an inductor-capacitor voltage-controlled oscillator

A design process comprising:

• translating a hardware description language (HDL) design structure encoded on a tangible machine-readable data storage medium to a second design structure, said HDL design structure comprising elements that when processed in a computer-aided design system generates a machine-executable representation of an inductor-capacitor voltage-controlled oscillator, wherein said HDL design structure comprises:
• a first node;
• a second node;
• an inductor coupled to the first node and the second node;
• a first capacitive network coupled to the first node and second node, wherein the first capacitive network is designed to allow the design structure to obtain an approximate target frequency of oscillation;
• a compensating capacitive network coupled to the first node and the second node, wherein the compensating capacitive network is designed to compensate for a change in frequency of oscillation of the design structure caused by a supply voltage dependence of the design structure;
• a second capacitive network coupled to the first node and the second node, wherein the second capacitive network allows the design structure to obtain a desired frequency of oscillation;
• a filter coupled to the second capacitive network, wherein the filter supplies a voltage to the second capacitive network;
• a transconductor coupled to the first node and the second node, wherein the transconductor is designed to compensate for a change in the frequency of oscillation in the design structure;
• and
• a sub-circuit coupled to the compensating capacitive network, wherein the sub-circuit generates and supplies voltage to the compensating capacitive network sufficient to allow the compensating capacitive network to compensate for a reduction in frequency of oscillation of the design structure, wherein the sub-circuit comprises:
• a first resistor coupled to a supply voltage;
• a second resistor coupled to the first resistor via a first node;
• a first field-effect transistor gate-coupled to the first node via a second node, wherein the first field-effect transistor is source-coupled to the supply voltage, and wherein the first field-effect transistor is drain-coupled to a third resistor via a third node;
• a second field-effect transistor gate-coupled to the third node via a fourth node, wherein the first field-effect transistor is source-coupled to the supply voltage, and wherein the second field-effect transistor is drain-coupled to a fourth resistor via a fifth node;
• a third field-effect transistor gate-coupled to the fifth node via a sixth node, wherein the third field-effect transistor is source-coupled to the supply voltage, and wherein the third field-effect transistor is drain-coupled to a fifth resistor via a seventh node;
• wherein the second resistor, third resistor, fourth resistor, and fifth resistor are ground coupled;
• and
• wherein the sub-circuit is coupled to the compensating capacitive network via an eighth node.

A circuit, comprising:

• a first node;
• a second node;
• an inductor coupled to the first node and the second node;
• a first capacitive network coupled to the first node and second node, wherein the first capacitive network is designed to allow the circuit to obtain an approximate target frequency of oscillation, wherein the first capacitive network includes a first capacitive branch, wherein the first capacitive branch includes a varactor, transistor, field-effect transistor, capacitor, or a capacitive element, and wherein the first capacitive network is controlled by an input data bit, and wherein a value of the input data bit determines a capacitance generated by the first capacitive network;
• a compensating capacitive network coupled to the first node and the second node, wherein the compensating capacitive network is designed to compensate for a change in frequency of oscillation of the circuit caused by a supply voltage dependence of the circuit, wherein the compensating capacitive network includes a third capacitive branch, wherein the third capacitive branch includes a source, drain and body shorted FET;
• a second capacitive network coupled to the first node and the second node, wherein the second capacitive network allows the design structure to obtain a desired frequency of oscillation, wherein the second capacitive network includes a second capacitive branch, wherein the capacitive branch includes a varactor, transistor, field-effect transistor, capacitor, or a capacitive element;
• a filter coupled to the second capacitive network, wherein the filter supplies a continuous voltage to the second capacitive network;
• a transconductor coupled to the first node and the second node, wherein the transconductor is designed to compensate for a change in the frequency of oscillation in the design structure, and wherein the transconductor includes a pair of cross-coupled field-effect transistors;
• and
• a sub-circuit coupled to the compensating capacitive network, wherein the sub-circuit generates and supplies voltage to the compensating capacitive network sufficient to allow the compensating capacitive network to compensate for a reduction in frequency of oscillation of the circuit, and wherein the sub-circuit comprises:
• a first resistor coupled to a supply voltage;
• a second resistor coupled to the first resistor via a first node;
• a first field-effect transistor gate-coupled to the first node via a second node, wherein the first field-effect transistor is source-coupled to the supply voltage, and wherein the first field-effect transistor is drain-coupled to a third resistor via a third node;
• a second field-effect transistor gate-coupled to the third node via a fourth node, wherein the first field-effect transistor is source-coupled to the supply voltage, and wherein the second field-effect transistor is drain-coupled to a fourth resistor via a fifth node;
• a third field-effect transistor gate-coupled to the fifth node via a sixth node, wherein the third field-effect transistor is source-coupled to the supply voltage, and wherein the third field-effect transistor is drain-coupled to a fifth resistor via a seventh node;
• wherein the second resistor, third resistor, fourth resistor, and fifth resistor are ground coupled;
• and
• wherein the sub-circuit is coupled to the compensating capacitive network via an eighth node.