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US 8,912,844 B2Granted
Semiconductor structure and method for reducing noise therein
AssigneeUnited Microelectronics Corp.
InventorsTzung-Lin Li, Chun-Chang Wu, Chih-Yu Tseng
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Abstract
The present invention provides a semiconductor structure, including a substrate, a first TSV, an inductor and a capacitor. The first TSV is disposed in the substrate and has a first signal. The inductor is disposed in the substrate. The capacitor is electrically connected to the inductor to form an LC circuit to bypass the noise from the first signal. The present invention further provides a method of reducing the signal noise in a semiconductor structure.
Claims17
A semiconductor structure, comprising:
- a substrate;
- a first silicon through via (TSV) disposed in the substrate, wherein the first TSV is used to transfer a first signal;
- an inductor structure comprising a second silicon through via (TSV) and disposed in the substrate;
- a capacitor structure electrically connected to the inductor structure, wherein the capacitor structure comprises a first electrode, a second electrode and a capacitor dielectric layer disposed therebetween, and the capacitor structure and the inductor structure form an LC circuit to reduce noise from the first signal;
- and wherein the inductor structure and the capacitor structure are placed in parallel with the first silicon through via.
2 more elements
A method for reducing noise in a semiconductor structure, comprising:
- providing a semiconductor structure, comprising:
- a substrate;
- a first through silicon via (TSV) disposed in the substrate;
- an inductor structure comprising a second silicon through via (TSV) and disposed in the substrate;
- and
- a capacitor structure electrically connected to the inductor to form an LC circuit, wherein the LC circuit has a resonant frequency and the capacitor structure comprises a first electrode, a second electrode and a capacitor dielectric layer disposed therebetween;
- and wherein the inductor structure and the capacitor structure are placed in parallel with the first silicon through via;
- and
- supplying a first signal to the first TSV, wherein a frequency of the first signal is substantially equal to the resonant frequency.
6 more elements
Dependencies are inferred from the claim text.