Semiconductor device
AssigneeRohm Co., Ltd.
InventorsYuichi Nakao, Satoshi Kageyama, Masaru Naitou
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AssigneeRohm Co., Ltd.
InventorsYuichi Nakao, Satoshi Kageyama, Masaru Naitou
Estimating the term…
The semiconductor device according to the present invention includes a semiconductor substrate, a first insulating layer laminated on the semiconductor substrate, a first metal wiring pattern embedded in a wire-forming region of the first insulating layer, a second insulating layer laminated on the first insulating layer, a second metal wiring pattern embedded in a wire-forming region of the second insulating layer and first dummy metal patterns embedded each in a wire-opposed region opposing to the wire-forming region of the second insulating layer and in a non-wire-opposed region opposing to a non-wire-forming region other than the wire-forming region of the second insulating layer, the wire-opposed region and the non-wire-opposed region each in a non-wire-forming region other than the wire-forming region of the first insulating layer.
A semiconductor device comprising:
Dependencies are inferred from the claim text.