Semiconductor device for smoothing the voltage of the end face of a drain of a high frequency semiconductor chip

A semiconductor device comprising:

• a high frequency semiconductor chip;
• an input matching circuit disposed at an input side of the high frequency semiconductor chip;
• an output matching circuit disposed at an output side of the high frequency semiconductor chip;
• a high frequency input terminal connected to the input matching circuit;
• a high frequency output terminal connected to the output matching circuit;
• and
• a smoothing capacitor terminal connected to the high frequency semiconductor chip, wherein
• the high frequency semiconductor chip, the input matching circuit and the output matching circuit are housed by one package, and
• the high frequency semiconductor chip comprises
• a semi-insulating substrate;
• a gate finger electrode, a source finger electrode, and a drain finger electrode configured to be disposed on a first surface of the semi-insulating substrate, and configured to have a plurality of fingers, respectively;
• a plurality of gate terminal electrodes, a plurality of source terminal electrodes, and a drain terminal electrode configured to be disposed on the first surface of the semi-insulating substrate, and configured to tie a plurality of fingers, respectively for each of the gate finger electrode, the source finger electrode, and the drain finger electrode;
• VIA holes, each configured to be disposed at a lower part of each source terminal electrode;
• and
• a ground electrode configured to be disposed on a second surface of the opposite side of the first surface of the semi-insulating substrate, and configured to be connected via the VIA holes to the source terminal electrodes.