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US 8,912,646 B2Granted
Integrated circuit assembly and method of making
AssigneeSilanna Semiconductor U.S.A., Inc.
InventorsMichael A. Stuber, Stuart B. Molin, Mark Drucker, Peter Fowler
Life of this patent
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Abstract
An integrated circuit assembly includes an insulating layer having a having a first surface and a second surface. A first active layer contacts the first surface of the insulating layer. A metal bond pad is electrically connected to the first active layer and formed on the second surface of the insulating layer. A substrate having a first surface and a second surface, with a second active layer formed in the first surface, is provided such that the first active layer is coupled to the second surface of the substrate.
Claims10
An integrated circuit assembly comprising:
- an insulating layer having a first surface and a second surface;
- a first active layer contacting the first surface of the insulating layer;
- a metal bond pad formed on the second surface of the insulating layer;
- wherein the metal bond pad is electrically connected to the first active layer;
- a substrate having a first surface and a second surface, the first active layer being coupled to the second surface of the substrate;
- a second active layer formed on the first surface of the substrate;
- a first wafer including the insulating layer and the first active layer;
- and
- a second wafer bonded to the first wafer, the second wafer including the substrate and the second active layer.
6 more elements
Dependencies are inferred from the claim text.