Semiconductor device and method for manufacturing same
AssigneeHitachi, Ltd.
InventorsEiichi Ide, Toshiaki Morita
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AssigneeHitachi, Ltd.
InventorsEiichi Ide, Toshiaki Morita
Estimating the term…
A semiconductor device includes an IGBT as a vertical semiconductor element provided between first, and second lead frames, in pairs, the first, and second lead frames being opposed to each other, first and second sintered-metal bonding layers provided on first and second bonding surfaces of the IGBT, in pairs, respectively, a through-hole opened in the second lead frame, and a heat-release member having a surface on one side thereof, bonded to a second sintered-metal bonding layer of the second bonding surface while a side (lateral face) of a surface of the heat-release member, on the other side thereof, being fitted into the through-hole. A solder layer is formed in a gap between an outer-side wall of the side of the surface of the heat-release member, on the other side thereof, and an inner-side wall of the through-hole.
A semiconductor device comprising:
Dependencies are inferred from the claim text.