Semiconductor devices and methods for fabricating the same

A semiconductor device, comprising:

• a substrate;
• a plurality of storage nodes on the substrate and extending in a vertical direction relative to the substrate;
• a lower support pattern in contact with the storage nodes between a bottom and a top of the storage nodes, the lower support pattern spaced apart from the substrate in the vertical direction, the lower support pattern having a first maximum thickness in the vertical direction;
• and
• an upper support pattern in contact with the storage nodes above the lower support pattern relative to the substrate, the upper support pattern spaced apart from the lower support pattern in the vertical direction, the upper support pattern having a second maximum thickness in the vertical direction that is greater than the first maximum thickness of the lower support pattern,
• wherein a portion of the upper support pattern that extends between neighboring storage nodes varies in thickness,
• wherein the portion of the upper support pattern extending between neighboring storage nodes has an intermediate region of relatively greater thickness than first and second end regions thereof,
• wherein the end regions correspond to contact portions of the upper support pattern at which the upper support pattern makes contact with the storage nodes and wherein the intermediate region corresponds to intermediate portions of the upper support pattern between neighboring storage nodes.