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US 8,912,628 B2Granted
Semiconductor device and method for manufacturing the same
AssigneePS4 Luxco S.a.r.l.
InventorHiroyuki Ode
Life of this patent
Estimating the term…
Abstract
A semiconductor device comprises a conductor film and a capacitor comprising a lower electrode provided on the conductor film. The conductor film includes a first conductive film containing a first metal, a second conductive film containing a second metal on the first conductive film, and an oxide film of the second metal on the second conductive film. The oxide film of the second metal has a lower electric resistivity than an oxide film of the first metal.
Claims20
A semiconductor device comprising:
- a conductor which includes a first conductive film containing a first metal, a second conductive film containing a second metal on the first conductive film, and an oxide film of the second metal on the second conductive film;
- and
- a capacitor comprising a lower electrode provided on the conductor,
- wherein the first conductive film and the second conductive film are configured such that the oxide film of the second metal has a lower electric resistivity than an oxide film of the first metal would have, if the first conductive film were oxidized to form an oxide film of the first metal.
1 more element
A semiconductor device comprising:
- a first conductive film containing a first metal;
- a second conductive film containing a second metal on the first conductive film;
- an oxide film of the second metal on a surface of the second conductive film;
- and
- a third conductive film on the oxide film of the second metal,
- wherein the first conductive film and the second conductive film are configured such that the oxide film of the second metal has a lower electric resistivity than an oxide film of the first metal would have, if the first conductive film were oxidized to form an oxide film of the first metal.
3 more elements
Dependencies are inferred from the claim text.