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US 8,912,626 B2Granted
eFuse and method of fabrication
AssigneeInternational Business Machines Corporation
InventorsEdward P. Maciejewski, Dustin Kenneth Slisher, Stefan Zollner
Life of this patent
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Abstract
An improved eFuse and method of fabrication is disclosed. A cavity is formed in a substrate, which results in a polysilicon line having an increased depth in the area of the fuse, while having a reduced depth in areas outside of the fuse. The increased depth reduces the chance of the polysilicon line entering the fully silicided state. The cavity may be formed with a wet or dry etch.
Claims11
An electronically programmable fuse, comprising:
- a dielectric region;
- a polysilicon line disposed on the dielectric region;
- a silicide layer formed on the polysilicon line;
- a first contact disposed at a first location on the polysilicon line;
- a second contact disposed at a second location on the polysilicon line;
- wherein the polysilicon line comprises a fuse region, wherein the fuse region is disposed between the first contact and the second contact, and two outside regions, the two outside regions adjacent to the fuse region;
- wherein the polysilicon line has a first depth of a single thickness in the outside regions;
- wherein the polysilicon line has a second depth of a single thickness in the fuse region;
- wherein the polysilicon line has a planar top surface;
- and
- wherein the second depth is greater than the first depth.
8 more elements
An electronically programmable fuse, comprising:
- a shallow trench isolation region;
- a cavity formed within the shallow trench isolation region;
- a polysilicon line disposed on the shallow trench isolation region and within the cavity;
- a silicide layer formed on the polysilicon line;
- a first contact disposed at a first location on the polysilicon line;
- a second contact disposed at a second location on the polysilicon line;
- wherein the polysilicon line comprises a fuse region, wherein the fuse region is disposed between the first contact and the second contact, and two outside regions, the two outside regions adjacent to the fuse region;
- wherein the cavity partially extends under the first and second contacts;
- wherein the polysilicon line has a first depth of a single thickness in the outside regions;
- wherein the polysilicon line has a second depth of a single thickness in the fuse region;
- wherein the polysilicon line has a planar top surface;
- wherein the second depth ranges from about 460 angstroms to about 590 angstroms;
- and
- wherein the silicide layer has a thickness ranging from about 85 angstroms to about 185 angstroms.
11 more elements
Dependencies are inferred from the claim text.