Semiconductor substrate and method for manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorTetsuya Kakehata
Life of this patent
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Abstract
A semiconductor device and a method for manufacturing thereof are provided. The method includes a step of forming a first insulating film containing silicon and oxygen as its composition over a single-crystal semiconductor substrate, a step of forming a second insulating film containing silicon and nitrogen as its composition over the first insulating film, a step of irradiating the second insulating film with first ions to form a separation layer in the single-crystal semiconductor substrate, a step of irradiating the second insulating film with second ions so that halogen is contained in the first insulating film, and a step of performing heat treatment to separate the single-crystal semiconductor substrate with a single-crystal semiconductor film left over the supporting substrate.
Claims14
A semiconductor substrate comprising:
- a single-crystal semiconductor film containing halogen;
- a first insulating film overlapped with the single-crystal semiconductor film, the first insulating film comprising silicon and oxygen as its composition and containing halogen;
- a second insulating film overlapped with the first insulating film, the second insulating film comprising silicon and nitrogen as its composition;
- a first bonding layer overlapped with the second insulating film, the first bonding layer having siloxane bonds;
- a barrier film overlapped with the first bonding layer, the barrier film comprising one selected from the group consisting of a stacked film of a silicon nitride film and a silicon oxide film, a stacked film of a silicon nitride film and a silicon oxynitride film, a stacked film of a silicon nitride oxide film and a silicon oxide film and a stacked film of a silicon nitride oxide film and a silicon oxynitride film;
- and
- a supporting substrate overlapped with the barrier film,
- wherein dangling bonds of the single-crystal semiconductor film at an interface between the single-crystal semiconductor film and the first insulating film are terminated by halogen diffused from the first insulating film.
A semiconductor device comprising:
- a barrier film over a substrate, the barrier film comprising one selected from the group consisting of a stacked film of a silicon nitride film and a silicon oxide film, a stacked film of a silicon nitride film and a silicon oxynitride film, a stacked film of a silicon nitride oxide film and a silicon oxide film and a stacked film of a silicon nitride oxide film and a silicon oxynitride film;
- a first bonding layer over the barrier film, the first bonding layer having siloxane bonds;
- a first insulating film over the first bonding layer a substrate, the first insulating film comprising silicon and nitrogen as its composition;
- a second insulating film over the first insulating film, the second insulating film comprising silicon and oxygen as its composition and containing halogen;
- a single-crystal semiconductor film over the second insulating film, the single-crystal semiconductor film containing halogen;
- a third insulating film over the single-crystal semiconductor film;
- and
- a gate electrode over the third insulating film, the gate electrode overlapping with the single-crystal semiconductor film,
- wherein dangling bonds of the single-crystal semiconductor film at an interface between the single-crystal semiconductor film and the second insulating film are terminated by halogen diffused from the second insulating film.
Dependencies are inferred from the claim text.