Ultra-violet light sensing device and manufacturing method thereof

An ultra-violet light sensing device, comprising:

• a substrate of a first conductivity type, including a light incident surface for receiving light;
• a high density shallow region of the first conductivity type, disposed in the first conductivity type substrate and adjacent to the light incident surface;
• a region of a second conductivity type, disposed under and adjacent to the first conductivity type high density shallow region;
• and
• a high density region of the first conductivity type, disposed under and adjacent to the second conductivity type region, whereby an electric potential barrier is formed in the first conductivity type high density region to isolate photoelectrons induced below the first conductivity type high density region.

A manufacturing method of a ultra-violet light sensing device, comprising:

• providing a substrate of a first conductivity type, which includes a light incident surface for receiving a light;
• forming a region of a second conductivity type under and adjacent to the light incident surface;
• and
• forming a high density region of the first conductivity type under and adjacent to the second conductivity type region, whereby an electric potential barrier is formed in the first conductivity type high density region to isolate photoelectrons induced below the first conductivity type high density region.