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US 8,912,617 B2Granted
Method for making semiconductor light detection devices
AssigneeSolar Junction Corporation
InventorsLan Zhang, Ewelina N. Lucow, Onur Fidaner, Michael W. Wiemer
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Abstract
A semiconductor light detection device fabrication technique is provided in which the cap etch and anti-reflection coating steps are performed in a single, self-aligned lithography module.
Claims13
A method for making a semiconductor light detection device comprising the steps of:
- providing a wafer comprising a substrate and a semiconductor light detection device overlying the substrate, wherein the semiconductor light detection device comprises a surface comprising a front surface field region and a cap layer overlying the front surface field region;
- patterning the cap layer with a photoresist in a cap etch pattern using photolithography, wherein the cap etch pattern defines contact areas and window regions between the contact areas;
- etching away the cap layer in the window regions to expose the front surface field region;
- applying an anti-reflection coating over the exposed front surface field region and over the photoresist;
- and
- removing the photoresist using a liftoff procedure to expose the contact areas.
3 more elements
A semiconductor light detection device fabricated by the steps of:
- providing a wafer, wherein the wafer comprises:
- a substrate and a semiconductor light detection device overlying the substrate, wherein a top region of the semiconductor light detection device comprises a front surface field region and a cap layer overlying the front surface field region;
- patterning the cap layer with a photoresist in a cap etch pattern using photolithography, wherein the cap etch pattern defines contact areas and window regions between the contact areas;
- etching the cap layer in the window regions according to the cap etch pattern to expose the front surface field region in the window regions;
- applying an anti-reflection coating over the exposed front surface field regions and over the photoresist;
- and
- removing the photoresist using a liftoff procedure to expose the contact areas, wherein the anti-reflection coating covers the front surface field regions in the window regions.
4 more elements
Dependencies are inferred from the claim text.