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US 8,912,615 B2Granted
Shallow junction photodiode for detecting short wavelength light
AssigneeOSI Optoelectronics, Inc.
InventorsPeter Steven Bui, Narayan Dass Taneja
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Abstract
The present invention is a photodiode or photodiode array having improved ruggedness for a shallow junction photodiode which is typically used in the detection of short wavelengths of light. In one embodiment, the photodiode has a relatively deep, lightly-doped P zone underneath a P+ layer. By moving the shallow junction to a deeper junction in a range of 2-5 μm below the photodiode surface, the improved device has improved ruggedness, is less prone to degradation, and has an improved linear current.
Claims16
A photodiode having a top surface defined by at least one SiO2 layer comprising:
- a low resistivity substrate;
- a high resistivity silicon layer positioned atop the low resistivity substrate and below the top surface of the photodiode;
- a first P doped zone within the high resistivity silicon layer, wherein the first P doped zone has a thickness of 2-5 μm;
- a first P+ doped zone positioned between the top of the first P doped zone and the top of the photodiode.
1 more element
Dependencies are inferred from the claim text.