Magnetic tunnel junction devices having magnetic layers formed on composite, obliquely deposited seed layers

A magnetic tunnel junction device, comprising:

• a composite seed layer formed on a substrate wherein the composite seed layer comprises a first seed layer obliquely formed with an incident angle from a surface normal of the substrate along a first direction of the substrate, and a second seed layer obliquely formed with the incident angle on the first seed layer along a second direction of the substrate, opposite the first direction;
• a single conformal magnetic free layer formed on the composite seed layer;
• a tunnel barrier layer formed on the magnetic free layer;
• and
• a second magnetic layer disposed over the tunnel barrier layer,
• wherein the composite seed layer with the obliquely formed first and second seed layers induces an in-plane magnetic anisotropy Hk of the single conformal magnetic free layer, and wherein the obliquely formed first and second seed layers are formed of non-magnetic material.

A method for fabricating a semiconductor device, comprising:

• forming a composite seed layer on a substrate;
• and
• forming a single conformal magnetic free layer on the composite seed layer;
• wherein forming the composite seed layer comprises:
• obliquely depositing a first seed layer with an incident angle from a surface normal of the substrate along a first direction of the substrate;
• and
• obliquely depositing a second seed layer obliquely with the incident angle on the first seed layer along a second direction of the substrate, opposite the first direction, wherein the composite seed layer with the obliquely formed first and second seed layers induces an in-plane magnetic anisotropy Hk of the single conformal magnetic free layer, and wherein the obliquely formed first and second seed layers are formed of non-magnetic material.