Semiconductor device having a high-K gate dielectric layer
AssigneeSamsung Electronics Co., Ltd.
InventorsWeonHong Kim, Dae-Kwon Joo, Hajin Lim, Jinho Do, Kyungil Hong, Moonkyun Song
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Abstract
A method of fabricating a semiconductor device includes forming a lower interfacial layer on a semiconductor layer, the lower interfacial layer being a nitride layer, forming an intermediate interfacial layer on the lower interfacial layer, the intermediate interfacial layer being an oxide layer, and forming a high-k dielectric layer on the intermediate interfacial layer. The high-k dielectric layer has a dielectric constant that is higher than dielectric constants of the lower interfacial layer and the intermediate interfacial layer.
Claims7
A semiconductor device comprising:
- an interfacial layer pattern on a predetermined region of a semiconductor layer;
- a high-k dielectric layer pattern on the interfacial layer pattern;
- and
- a gate electrode on the high-k dielectric layer pattern,
- wherein:
- the interfacial layer pattern includes a first nitride layer pattern contacting the semiconductor layer, an oxide layer pattern on the first nitride layer pattern, and a second nitride layer pattern on the oxide layer pattern, the second nitride layer pattern being thicker than the first nitride layer pattern, and
- the high-k dielectric layer pattern has a dielectric constant that is higher than dielectric constants of the first and second nitride layer patterns and the oxide layer pattern.
A semiconductor device, comprising:
- an interfacial layer pattern on a predetermined region of a semiconductor layer;
- a high-k dielectric layer pattern on the interfacial layer pattern;
- and
- a gate electrode on the high-k dielectric layer pattern,
- wherein:
- the interfacial layer pattern includes a first nitride layer pattern contacting the semiconductor layer an oxide layer pattern on the first nitride layer pattern, and a second nitride layer pattern on the oxide layer pattern, and
- the high-k dielectric layer pattern has a dielectric constant that is higher than dielectric constants of the first and second nitride layer pattern and the oxide layer patter;
- wherein the second nitride layer pattern is a same material as the first nitride layer pattern.
Dependencies are inferred from the claim text.