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AssigneeInternational Business Machines Corporation
InventorsUnoh Kwon, Ramachandra Divakaruni, Siddarth A. Krishnan, Ravikumar Ramachandran
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The thickness and composition of a gate dielectric can be selected for different types of field effect transistors through a planar high dielectric constant material portion, which can be provided only for selected types of field effect transistors. Further, the work function of field effect transistors can be tuned independent of selection of the material stack for the gate dielectric. A stack of a barrier metal layer and a first-type work function metal layer is deposited on a gate dielectric layer within recessed gate cavities after removal of disposable gate material portions. After patterning the first-type work function metal layer, a second-type work function metal layer is deposited directly on the barrier metal layer in the regions of the second type field effect transistor. A conductive material fills the gate cavities, and a subsequent planarization process forms dual work function metal gate structures.
A semiconductor structure comprising a first field effect transistor and a second field effect transistor that are located on a semiconductor substrate,
Dependencies are inferred from the claim text.