Integrated circuits having protruding source and drain regions and methods for forming integrated circuits
AssigneeGlobalfoundries Inc.
InventorsTim Baldauf, Tom Herrmann, Stefan Flachowsky, Ralf Illgen
Life of this patent
Estimating the term…
Abstract
Methods for forming integrated circuits and integrated circuits are disclosed. The integrated circuits comprise gate structures overlying and transverse to one or more fins that are delineated by trenches formed in a semiconductor substrate. Protruding portions are formed in the trenches in between the gate electrode structure on exposed sidewall surfaces of the one or more fins. The trenches are filled with an insulating material between the protruding portions and the gate structures.
Claims14
A method for forming an integrated circuit, comprising:
- etching a plurality of trenches into a silicon substrate and filling the trenches with a first insulating material to delineate a plurality of spaced-apart silicon fins having a longitudinal axis;
- forming gate structures overlying said plurality of fins, each of said gate structures extending in a gate width direction that is transverse to said longitudinal axis of said plurality of fins;
- removing said first insulating material for forming recess trenches between said gate structures and for exposing at least sidewall portions of said spaced-apart silicon fins such that said recess trenches have a depth corresponding to a first height;
- forming protruding portions of semiconductor material on the exposed sidewall portions of said fins, wherein said protruding portions of semiconductor material comprise an outermost protruded surface and at least one tapered portion, wherein said at least one tapered portion is positioned between said outermost protruded surface and one of said gate structures, said at least one tapered portion being formed such that it has a width that increases with increasing distance from said gate structure, wherein said width of said at least one tapered portion is measured in a plane parallel to said gate width direction;
- and
- filling said recess trenches with a second insulating material up to at least said first height.
A method for forming an integrated circuit, comprising:
- forming a mask over a silicon substrate and patterning strip-shaped patterning portions having a longitudinal axis and a plurality of protruding portions protruding outward from the longitudinal axis at both sides of said strip-shaped patterning portions, each protruding portion having at least one tapered portion;
- removing the substrate material according to the formed mask, thereby forming recesses in contact with said tapered portions;
- filling said recesses with an insulating material;
- and
- forming gate structures overlying said recesses such that the tapered portions are exposed, each of said gate structures extending in a gate width direction, wherein each tapered portion has a width that increases with increasing distance from one of said gate structures and wherein said width of said tapered portion is measured in a plane parallel to said gate width direction.
Dependencies are inferred from the claim text.