Back to results
US 8,912,604 B2Granted
Semiconductor device having buried bit lines and method for fabricating the same
AssigneeSK hynix Inc.
InventorsJu-Hyun Myung, Eui-Seong Hwang, Eun-Shil Park, Tae-Yoon Kim
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes body lines, formed substantially perpendicular to a substrate, and having recessed sidewalls, buried bit lines, buried in the recessed sidewalls, and including a metal silicide, and a barrier layer interposed between each of the buried bit lines and the body lines corresponding thereto, and containing germanium.
Claims12
A semiconductor device comprising:
- body lines, formed substantially perpendicular to a substrate, and having recessed sidewalls;
- buried bit lines, buried in the recessed sidewalls;
- and a barrier layer, interposed between each of the buried bit lines and each of the body lines corresponding thereto.
A semiconductor device comprising:
- a plurality of active regions separated from one another;
- a plurality of first trenches defined in a substrate, wherein the plurality of active regions are separated from one another by the plurality of first trenches;
- supporters filled in the plurality of first trenches;
- second trenches, each separating each of the plurality of active regions, and each having recessed sidewalls that face each other;
- a pair of separated buried bit lines, formed in each of the second trenches, and including a metal silicide;
- and
- a barrier layer, interposed between the pair of separated buried bit lines and each of the second trenches, and containing germanium.
4 more elements
Dependencies are inferred from the claim text.