Lateral double-diffused metal oxide semiconductor (LDMOS) transistors

A lateral double-diffused metal oxide semiconductor (LDMOS) transistor, comprising:

• a) an n-doped deep n-well (DNW) region on a substrate;
• b) a field oxide (FOX) for isolation of the LDMOS transistor, wherein the FOX comprises a first local oxidation of silicon (LOCOS);
• c) a gate oxide and a drain oxide between a source region and a drain region of the LDMOS transistor, the gate oxide being adjacent to the source region, the drain oxide being adjacent to the drain region, wherein the drain oxide comprises a second LOCOS that is different than the first LOCOS such that a thickness of the drain oxide is different than a thickness of the FOX;
• d) a conductive gate over the gate oxide and a portion of the drain oxide;
• e) an n-doped n-body region in the source region;
• f) a p-doped drain region in the drain region, the p-doped drain region ending under the drain oxide;
• g) a first p-doped p+ region and an n-doped n+ region adjacent thereto in the n-doped n-body region of the source region;
• and
• h) a second p-doped p+ region in the drain region.