Semiconductor device including monos-type memory cell

A semiconductor device comprising:

• a semiconductor substrate having a main surface;
• a MONOS-type memory cell formed over the main surface and having a channel;
• an n-channel transistor formed over the main surface;
• a p-channel transistor formed over the main surface;
• and
• a nitride film formed in a manner to contact respective top surfaces of the MONOS-type memory cell, the n-channel transistor, wherein
• the nitride film applies stress to the channels of the MONOS-type memory cell, the n-channel transistor, and the p-channel transistor,
• the MONOS-type memory cell, the n-channel transistor, and the p-channel transistor each include a gate electrode,
• the MONOS-type memory cell and the n-channel transistor each include a first side wall silicon oxide film and a first side wall silicon nitride film that are layered in this order in a manner to contact a side wall of the gate electrode, and the first side wall silicon oxide film and the first side wall silicon nitride film are covered by the nitride film, and
• the p-channel transistor includes a second side wall silicon oxide film formed over a side wall surface of the gate electrode, the second side wall silicon oxide film being covered by the nitride film, but includes no side wall silicon nitride film, between the second side wall silicon oxide film and the nitride film, that is included in the MONOS-type memory cell and the n-channel transistor.