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US 8,912,586 B2Granted
Semiconductor device and method for manufacturing the same
AssigneeHynix Semiconductor Inc.
InventorChan Woo Kim
Life of this patent
Estimating the term…
Abstract
In a semiconductor device, a polysilicon layer of a lower electrode contact plug is removed by a strip process such that the deposition area of a dielectric film is increased and capacitance of a capacitor is assured. A method for manufacturing the semiconductor device is also disclosed.
Claims7
A semiconductor device comprising:
- bit lines formed over a semiconductor substrate;
- spacers formed at sidewalls of the bit lines;
- a lower electrode including an upper portion with a cylinder structure and a lower portion with a concave structure formed over a plug exposed between the spacers;
- and
- a dielectric film and an upper electrode formed over the lower electrode,
- wherein the dielectric film and the upper electrode are formed over only an inner side of the lower electrode at a first region where one of the spacers is formed over an outer side of the lower electrode,
- wherein the dielectric film and the upper electrode are formed over opposing sides of the upper portion of the lower electrode,
- wherein the bit lines are disposed beside the lower portion of the lower electrode and below the upper portion of the lower electrode, and
- wherein top surfaces of the bit lines are at or below a transition between the upper portion of the lower electrode and the lower portion of the lower electrode.
6 more elements
Dependencies are inferred from the claim text.