Semiconductor memory device and method of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorKyoung-Sub Shin
Life of this patent
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Abstract
Provided may be a semiconductor memory device and a method of forming the semiconductor memory device. The memory device of example embodiments may include a bit line structure including a bit line on a semiconductor substrate, and a buried contact plug structure including a buried contact pad and a buried contact plug that extends in a lower portion of the bit line from one side of the bit line and connected to the buried contact pad. A width of the buried contact plug near a top surface of the buried contact pad may be greater than a width of the buried contact plug adjacent to the bit line.
Claims10
A memory device, comprising:
- a bit line structure including a bit line on a semiconductor substrate;
- and
- a buried contact plug structure including a buried contact pad and a buried contact plug connected to the buried contact pad, the buried contact plug including a first buried contact plug connected to the buried contact pad and laterally expanding under the bit line structure, and a second buried contact plug connected to the first buried contact plug adjacent to the bit line;
- and
- a buried contact spacer between the bit line structure and the second buried contact plug, the buried contact spacer being in contact with a top surface of the first buried contact plug,
- wherein a bottom width of the second buried contact plug is less than a top width of the first buried contact plug.
Dependencies are inferred from the claim text.