US 8,912,581 B2 · 3D transmission lines for semiconductors

Abstract

A transmission line structure for semiconductor RF and wireless circuits, and method for forming the same. The transmission line structure includes embodiments having a first die including a first substrate, a first insulating layer, and a ground plane, and a second die including a second substrate, a second insulating layer, and a signal transmission line. The second die may be positioned above and spaced apart from the first die. An underfill is disposed between the ground plane of the first die and the signal transmission line of the second die. Collectively, the ground plane and transmission line of the first and second die and underfill forms a compact transmission line structure. In some embodiments, the transmission line structure may be used for microwave applications.

Claims25

Dependent claims

A semiconductor transmission line structure comprising:

a first die including a first substrate having active devices, a first insulating layer formed on the first substrate, and a ground plane formed on the first insulating layer;
a second die including a second substrate having active devices, a second insulating layer formed on the second substrate, and a signal transmission line formed on the second insulating layer, the second die being stacked above and spaced apart from the first die;
and
an underfill disposed between the ground plane of the first die and the signal transmission line of the second die, wherein the ground plane and the signal transmission line are separated by, and at least partially embedded inside, the underfill.

1 more element

Dependencies are inferred from the claim text.

3D transmission lines for semiconductors

Life of this patent

3D transmission lines for semiconductors

Life of this patent

Abstract

Claims25