Structures and techniques for using semiconductor body to construct bipolar junction transistors

An electronic system, comprising:

• at least one integrated circuit;
• the integrated circuit including at least one bipolar junction transistor (BJT) formed from a mesh structure of cells on a semiconductor body, the mesh structure including at least:
• at least one first type of polygon cells having a first type of implant surrounded by at least one second type of cells having a first type of implant on at least one side, and surrounded also by at least one third type of cells having a second type of implant near at least one meeting point of the cells;
• a space provided between the first and the second types of implant regions of the cells;
• and
• a silicide block layer covering the space and overlapping into both the implant regions,
• wherein the space between the first and second type cells is doped with the second type of implant, and
• wherein the first, second, and third types of cells are coupled to serve as an emitter, collector, and base of a BJT, respectively.

A mesh structure having a plurality of cells on a semiconductor body to form at least one bipolar junction transistor (BJT), the mesh structure comprising:

• at least one first type of cells having a first type of implant surrounded by a plurality of second type of cells having a first type of implant on at least one side, and surrounded also by a plurality of third type of cells having a second type of implant;
• a space provided between implant regions of the cells;
• and
• a silicide block layer covering the space and overlapping into both the implant regions,
• wherein the space between the first and second type cells is doped with the second type of implant, and
• wherein the first, second, and third types of cells are coupled to serve as an emitter, collector, and base of a BJT, respectively.