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US 8,912,572 B2Granted
High electron mobility transistor and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorHong-Pyo Heo
Life of this patent
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Abstract
According to example embodiments, a high electron mobility transistor (HEMT) includes a first semiconductor layer on a substrate and a second semiconductor layer on the first semiconductor layer. The first and second semiconductor layers define a recessed region. A semiconductor doped layer is in the recessed region of first and second semiconductor layers. A 2-dimensional electron gas (2DEG) region is at a portion of the first semiconductor layer adjacent to both sides of the semiconductor doped layer.
Claims11
A high electron mobility transistor (HEMT) comprising:
- a first semiconductor layer on a substrate;
- a second semiconductor layer on the first semiconductor layer,
- the first and second semiconductor layers defining a recessed region;
- a semiconductor doped layer in the recessed region of the first and second semiconductor layers,
- the semiconductor doped layer including a p-type doped region;
- and
- a 2-dimensional electron gas (2DEG) region at a portion of the first semiconductor layer adjacent to both sides of the semiconductor doped layer.
4 more elements
Dependencies are inferred from the claim text.