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US 8,912,571 B2Granted
Compound semiconductor device including first film on compound semiconductor layer and second film on first film and method of manufacturing the same
AssigneeFujitsu Limited
InventorsMasahito Kanamura, Toshihide Kikkawa, Kenji Imanishi
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Abstract
A compound semiconductor device includes: a compound semiconductor layer; a first film formed over the compound semiconductor layer, the first film being in a negatively charged state or a non-charged state at an interface with the compound semiconductor layer; a second film formed over the first film, the second film being in a positively charged state at an interface with the first film; and a gate electrode to be embedded in an opening formed in the second film.
Claims13
A compound semiconductor device comprising:
- a compound semiconductor layer;
- a first film formed over the compound semiconductor layer, the first film being in a negatively charged state or a non-charged state at an interface with the compound semiconductor layer;
- a second film formed over the first film, the second film being in a positively charged state at an interface with the first film;
- and
- a gate electrode embedded in an opening formed in the second film,
- wherein the first film contains aluminum nitride.
3 more elements
A method of manufacturing a compound semiconductor device, comprising:
- forming a first film over a compound semiconductor layer, the first film being a negatively-charged state or a non-charged state at an interface with the compound semiconductor layer;
- forming a second film over the first film, the second film being a positively-charged state at an interface with the first film;
- forming an opening in the second film;
- and
- forming a gate electrode embedded in the opening,
- wherein the first film contains aluminum nitride.
3 more elements
Dependencies are inferred from the claim text.