High electron mobility transistor and method of forming the same

Abstract

A high electron mobility transistor (HEMT) includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A source feature and a drain feature are in contact with the second III-V compound layer. A n-type doped region underlies each source feature and drain feature in the second III-V compound layer. A p-type doped region underlies each n-type doped region in the first III-V compound layer. A gate electrode is disposed over a portion of the second III-V compound layer between the source feature and the drain feature.

Dependencies are inferred from the claim text.