Light emitting diode and method for manufacturing the same
AssigneeLG Innotek Co., Ltd.
InventorSang Youl Lee
Life of this patent
Estimating the term…
Abstract
A light emitting device is provided, including a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, an active layer between the first semiconductor layer and the second semiconductor layer, and a plurality of electrodes. The first semiconductor layer has a step-down region such that one of the plurality of electrodes is placed on the first semiconductor layer. The light emitting device includes a substrate including a first portion having a flat top surface, a second portion having a flat bottom surface and disposed under the first portion, and a side portion disposed between the first portion and the second portion. An area of the flat top surface of the first portion is larger than an area of the flat bottom surface of the second portion.
Claims20
A light emitting device, comprising:
- a light emitting structure including a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, an active layer between the first semiconductor layer and the second semiconductor layer, and a plurality of electrodes, the first semiconductor layer having a step-down region such that one of the plurality of electrodes is placed thereon;
- and
- a growing substrate disposed under the light emitting structure and including a first portion having a flat top surface, a second portion having a flat bottom surface and disposed under the first portion, and a side portion disposed between the first portion and the second portion, an area of the flat top surface of the first portion being larger than an area of the flat bottom surface of the second portion,
- wherein a side surface of the side portion of the growing substrate is inclined with reference to the flat bottom surface of the second portion so as to help light emitted from the light emitting structure get out of the growing substrate,
- wherein the area of the flat top surface of the first portion is substantially the same as a largest flat surface area of the light emitting structure, and
- wherein the first portion of the growing substrate has a substantially vertical side surface with reference to the flat bottom surface of the second portion such that the area of the flat top surface of the first portion is substantially the same as an area of a bottom surface of the first portion.
A light emitting device, comprising:
- a light emitting structure including a first semiconductor layer, a second semiconductor layer, an active layer between the first semiconductor layer and the second semiconductor layer, and a plurality of electrodes, the first semiconductor layer having a step-down region such that one of the plurality of electrodes is placed thereon;
- and
- a growing substrate disposed under the light emitting structure and including a flat top surface, a flat bottom surface, and an intermediate part between the flat top surface and the flat bottom surface, the intermediate part including a first portion and a second portion disposed under the first portion, side surfaces of the first portion and the second portion each having a different inclination angle with reference to the bottom surface of the growing substrate so as to help light emitted from the light emitting structure get out of the growing substrate,
- wherein an outline of the flat top surface is substantially the same as an outline of the light emitting structure,
- wherein the first portion of the growing substrate is thinner than the second portion of the growing substrate,
- wherein a length of the side surface of the first portion of the growing substrate is shorter than a length of the side surface of the second portion of the growing substrate, and
- wherein the side surface of the second portion of the growing substrate has only one inclination angle with reference to the bottom surface of the growing substrate.
A light emitting device, comprising:
- a light emitting structure including a first semiconductor layer, a second semiconductor layer, an active layer between the first semiconductor layer and the second semiconductor layer, and a plurality of electrodes;
- and
- a substrate disposed under the light emitting structure and including a flat top surface, a flat bottom surface, and an intermediate part between the flat top surface and the flat bottom surface, the intermediate part including a first portion, a second portion disposed under the first portion, and a transition portion disposed between the first portion and the second portion, side surfaces of the transition portion and the second portion each having an obtuse inclination angle respectively with reference to the flat bottom surface of the substrate so as to help light emitted from the light emitting structure get out of the substrate,
- wherein the side surfaces of the transition portion and the second portion are provided continuously, and
- wherein the first portion includes a substantially vertical side surface with reference to the flat bottom surface.
Dependencies are inferred from the claim text.