US 8,912,559 B2Granted

Group III nitride semiconductor light-emitting device

AssigneeToyoda Gosei Co., Ltd.

InventorsShingo Totani, Masashi Deguchi, Naoki Nakajo

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Abstract

A Group III nitride semiconductor light-emitting device, includes a groove having a depth extending from the top surface of a p-type layer to an n-type layer is provided in a region overlapping (in plan view) with the wiring portion of an n-electrode or the wiring portion of a p-electrode. An insulating film is provided so as to continuously cover the side surfaces and bottom surface of the groove, the p-type layer, and an ITO electrode. The insulating film incorporates therein reflective films in regions directly below the n-electrode and the p-electrode (on the side of a sapphire substrate). The reflective films in regions directly below the wiring portion of the n-electrode and the wiring portion of the p-electrode are located at a level lower than that of a light-emitting layer. The n-electrode and the p-electrode are covered with an additional insulating film.

Claims18

Dependent claims

A face-up-type Group III nitride semiconductor light-emitting device, comprising:

a growth substrate;
an n-type layer;
a light-emitting layer;
a p-type layer;
an n-electrode including a bonding portion and a wiring portion;
a p-electrode including a bonding portion and a wiring portion;
a first insulating film;
and
a second insulating film,
the n-type layer, the light-emitting layer, and the p-type layer being sequentially stacked on the growth substrate, the n-electrode and the p-electrode being formed on the first insulating film, and a portion of each of the n-electrode and the p-electrode other than the bonding portion being covered with the second insulating film,
wherein the light-emitting device includes a reflective film incorporated in the first insulating film in a region directly below each of the n-electrode and the p-electrode, the reflective film comprising a material exhibiting a reflectance for light of emission wavelength higher than that of the wiring portion,
wherein a groove having a depth extending from a top surface of the p-type layer to the n-type layer is formed in at least one of a region directly below the wiring portion of the n-electrode and a region directly below the wiring portion of the p-electrode, and
wherein the reflective film which is formed in the groove is located at a level lower than that of the light-emitting layer.

10 more elements

A face-up-type Group III nitride semiconductor light-emitting device, comprising:

a growth substrate;
an n-type layer;
a light-emitting layer;
a p-type layer;
an n-electrode including a bonding portion and a wiring portion;
a p-electrode including a bonding portion and a wiring portion;
a first insulating film;
and
a second insulating film,
the n-type layer, the light-emitting layer, and the p-type layer being sequentially stacked on the growth substrate, the n-electrode and the p-electrode being formed on the first insulating film, and a portion of each of the n-electrode and the p-electrode other than the bonding portion being covered with the second insulating film,
wherein the light-emitting device includes a first reflective film incorporated in the first insulating film in a region directly below each of the n-electrode and the p-electrode, the first reflective film comprising a material exhibiting a reflectance for light of emission wavelength higher than that of the wiring portion,
wherein the light-emitting device further comprises a second reflective film incorporated in the second insulating film in a region directly above each of the wiring portions of the n-electrode and the p-electrode, the second reflective film comprising a material exhibiting a reflectance for light of emission wavelength higher than that of the wiring portion,
wherein a groove having a depth extending from a top surface of the p-type layer to the n-type layer is formed in at least one of a region directly below the wiring portion of the n-electrode and a region directly below the wiring portion of the p-electrode, and
wherein the first and second reflective films which are formed in the groove are located at a level lower than that of the light-emitting layer.

11 more elements

Dependencies are inferred from the claim text.

Facts

Application: 13/426,534Filed 21 Mar 2012
Priority: JP 2011-06457123 Mar 2011
Published: US 2012/0241720 A127 Sep 2012
Granted: 16 Dec 2014
Term ends: Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10H 20/841
Coatings, e.g. passivation layers or antireflective coatings: reflective coatings, e.g. dielectric Bragg reflectors
H10H 20/811
Bodies: having quantum effect structures or superlattices, e.g. tunnel junctions
H10H 20/812
Having quantum effect structures or superlattices, e.g. tunnel junctions: within the light-emitting regions, e.g. having quantum confinement…
H10H 20/824
Materials of the light-emitting regions: comprising only Group III-V materials, e.g. GaP