Light emitting device and method of manufacturing the same
AssigneesLG Electronics Inc., LG Innotek Co., Ltd.
InventorsJong Wook Kim, Hyun Kyong Cho, Gyu Chul Yi, Sung Jin An, Jin Kyoung Yoo, Young Joon Hong
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Abstract
A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.
Claims20
A light emitting device, comprising:
- a conductive substrate;
- a nitride semiconductor layer formed on the conductive substrate, the nitride semiconductor layer including a second semiconductor layer on the conductive substrate, an active layer on the second semiconductor layer, and a first semiconductor layer on the active layer;
- a light extraction structure formed on the first semiconductor layer, wherein a portion of the first semiconductor layer is free of the light extraction structure;
- and
- a first electrode located on the portion of the first semiconductor layer that is free of the light extraction structure,
- wherein a top of the light extraction structure is higher than a middle between a top surface of the first electrode and a bottom surface of the first electrode, on a top surface of the first semiconductor layer.
A light emitting device, comprising:
- a conductive substrate;
- a nitride semiconductor layer formed on the conductive substrate, the nitride semiconductor layer including a second semiconductor layer on the conductive substrate, an active layer on the second semiconductor layer, and a first semiconductor layer on the active layer;
- a light extraction structure formed on a first portion of first semiconductor layer;
- and
- a first electrode located on a second portion of the first semiconductor layer,
- wherein a top of the light extraction structure is higher than a middle between a top surface of the first electrode and a bottom surface of the first electrode, on a top surface of the first semiconductor layer.
Dependencies are inferred from the claim text.