Long wavelength light emitting device with photoluminescence emission and high quantum efficiency

A light emitting device, comprising:

• a first semiconductor material;
• a second semiconductor material spaced apart from the first semiconductor material;
• a first active region between the first and second semiconductor materials, the first active region being configured to produce a first emission via electroluminescence;
• a second active region at least proximate the second semiconductor material such that the second semiconductor material is between the first and second active regions, the second active region being configured to absorb at least a portion of the first emission and produce a second emission via photoluminescence;
• and
• a third semiconductor material on the second active region, the third semiconductor material and the second material having the same doping type,
• wherein the first and second active regions individually include at least one of a bulk indium gallium nitride (“InGaN”) material, an InGaN single quantum well (“SQW”), and GaN/InGaN multiple quantum wells (“MQWs”).

A light emitting device, comprising:

• a first contact, the first contact including silver (Ag);
• a first semiconductor material on the first contact;
• a second semiconductor material spaced apart from the first semiconductor material;
• a first active region between the first and second semiconductor materials, the first active region being configured to produce a first emission via electroluminescence;
• a second active region at least proximate the second semiconductor material such that the second semiconductor material is between the first and second active regions, the second active region being configured to absorb at least a portion of the first emission and produce a second emission via photoluminescence;
• a third semiconductor material on the second active region;
• and
• a second contact on the third semiconductor material, the second contact including copper (Cu), wherein:
• the first semiconductor material includes P-type gallium nitride (“GaN”);
• the second semiconductor material includes N-type GaN;
• and
• the third semiconductor material includes N-type GaN.

A light emitting device, comprising;

• a first semiconductor material;
• a second semiconductor material spaced apart from the first semiconductor material;
• a first active region between the first and second semiconductor materials, the first active region being configured to produce a first emission via electroluminescence;
• a second active region at least proximate the second semiconductor material such that the second semiconductor material is between the first and second active regions, the second active region being configured to absorb at least a portion of the first emission and produce a second emission via photoluminescence;
• a third semiconductor material on the second active region, the third semiconductor material and the second material having the same doping type;
• a first contact;
• and
• a second contact, wherein—
• the first semiconductor material is on the first contact, and
• the second contact is on the third semiconductor material.

A light emitting device, comprising:

• a first contact;
• a second contact spaced apart from the first contact;
• a first active region between the first and second contacts, the first active region being configured to produce a first emission via electroluminescence when a voltage is applied between the first and second contacts, the first emission having a first center wavelength;
• a second active region spaced apart from the first active region, the second active region being configured to absorb at least a portion of the first emission and produce a second emission via photoluminescence, the second emission having a second center wavelength longer than the first center wavelength;
• and
• a semiconductor material between the first and second active regions, wherein—
• the semiconductor material is configured to communicate an electrical current from the second active region to the first active region,
• the semiconductor material has a thickness configured to substantially block hole migration from the first active region to the second active region, and
• the semiconductor material has a thickness configured to substantially block hole migration from the first active region to the second active region, and
• the first and second active regions individually include at least one of a bulk indium gallium nitride (“InGaN”) material, an InGaN single quantum well (“SQW”), and GaN/InGaN multiple quantum wells (“MQWs”).