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US 8,912,551 B2Granted
Substrate assembly for crystal growth and fabricating method for light emitting device using the same
AssigneeSeoul Viosys Co., Ltd.
InventorsChung Hoon Lee, Kyung Hee Ye, Dae Sung Cho, Won Cheol Seo
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Abstract
A substrate assembly on which a first conduction-type semiconductor layer, an active layer and a second conduction-type semiconductor layer are formed is disclosed, the substrate assembly comprising a first substrate, a second substrate and a bonding layer interposed there between. In the substrate assembly, the thermal expansion coefficient of the bonding layer is smaller than or equal to that of at least one of the first and second substrates.
Claims18
A substrate assembly, comprising:
- a first substrate;
- a second substrate;
- and
- a bonding layer completely filling the area between the first substrate and the second substrate,
- wherein the thermal expansion coefficient of the bonding layer is smaller than or equal to that of at least one of the first substrate and the second substrate,
- wherein the first and second substrate physically contact the bonding layer, and
- wherein sides of the first and second substrates facing each other have the same surface area.
4 more elements
A method of forming a light emitting device, the method comprising:
- forming a bonding layer on at least one of a first substrate and a second substrate;
- bonding the first substrate and the second substrate to each other, the bonding layer being interposed between the first substrate and the second substrate;
- forming at least one semiconductor lamination structure on the first substrate;
- removing the bonding layer and the second substrate after the formation of the at least one semiconductor lamination structure;
- and
- grinding the first substrate,
- wherein sides of the first and second substrates facing each other have the same surface area.
4 more elements
A substrate assembly, comprising:
- a first substrate;
- a second substrate;
- a bonding layer disposed between the first substrate and the second substrate;
- and
- a semiconductor lamination structure arranged on the first substrate, the semiconductor lamination structure comprising a first type semiconductor layer, an active layer, and a second type semiconductor layer,
- wherein the first substrate is disposed between the semiconductor lamination structure and the second substrate,
- wherein the thermal expansion coefficient of the bonding layer is smaller than or equal to the thermal expansion coefficient of at least one of the first substrate and the second substrate, and
- wherein sides of the first and second substrates facing each other have the same surface area.
5 more elements
Dependencies are inferred from the claim text.