Dislocations in SiC semiconductor substrate
AssigneeSumitomo Electric Industries, Ltd.
InventorsTaro Nishiguchi, Shin Harada, Shinsuke Fujiwara
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Abstract
A semiconductor substrate has a main surface and formed of single crystal silicon carbide. The main surface includes a central area, which is an area other than the area within 5 mm from the outer circumference. When the central area is divided into square areas of 1 mm×1 mm, in any square area, density of dislocations of which Burgers vector is parallel to <0001> direction is at most 1×105 cm−2. Thus, a silicon carbide semiconductor substrate enabling improved yield of semiconductor devices can be provided.
Claims14
A semiconductor substrate having a main surface, formed of single crystal silicon carbide, said main surface comprising:
- an outer circumferential area within 5 mm from an outer circumference;
- and
- a central area as an area other than the outer circumferential area, wherein
- when said central area is divided into square areas of 1 mm×1 mm, in any said square area, density of dislocations of which Burgers vector is parallel to <0001> direction is at most 1×105 cm−2,
- wherein
- in said central area, density of dislocations of which Burgers vector is parallel to the <0001> direction is lower than density of dislocations of which Burgers vector includes components in the <0001> direction and <11-20> direction.
A semiconductor substrate having a main surface, formed of single crystal silicon carbide, said main surface comprising:
- an outer circumferential area within 5 mm from an outer circumference;
- and
- a central area as an area other than the outer circumferential area, wherein
- when said central area is divided into square areas of 1 mm×1 mm, in any said square area, density of dislocations of which Burgers vector is parallel to <11-20> direction, with dislocation line existing in a basal plane and the dislocation line exposed at the main surface of the semiconductor substrate, is at most 1×105 cm−2,
- wherein
- in said central area, density of dislocations of which Burgers vector is parallel to the <11-20> direction is lower than density of dislocations of which Burgers vector includes components in the <0001> direction and the <11-20> direction.
A semiconductor substrate having a main surface, formed of single crystal silicon carbide, said main surface comprising:
- an outer circumferential area within 5 mm from an outer circumference;
- and
- a central area as an area other than the outer circumferential area, wherein
- when said central area is divided into square areas of 1 mm×1 mm, in any said square area, density of dislocations of which Burgers vector includes components parallel to <0001> direction and <11-20> direction is at most 1×105 cm−2.
Dependencies are inferred from the claim text.