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US 8,912,544 B2Granted
Light-emitting display device and method for manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Kaoru Hatano
Life of this patent
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Abstract
Provided is a method to manufacture a light-emitting display device in which a contact hole for the electrical connection of the pixel electrode and one of the source and drain electrode of a transistor and a contact hole for the processing of a semiconductor layer are formed simultaneously. The method contributes to the reduction of a photography step. The transistor includes an oxide semiconductor layer where a channel formation region is formed.
Claims24
A light-emitting display device comprising a pixel over a flexible substrate, the pixel comprising:
- a first transistor comprising:
- a first oxide semiconductor layer;
- and
- a first source electrode and a first drain electrode which are electrically connected to the first oxide semiconductor layer;
- a second transistor comprising:
- a gate electrode;
- a gate insulating layer in direct contact with the gate electrode;
- and
- a second source electrode and a second drain electrode with a second oxide semiconductor layer between the gate insulating layer and the second source electrode and between the gate insulating layer and the second drain electrode, wherein the second source electrode and the second drain electrode are electrically connected to the second oxide semiconductor layer;
- and
- a light-emitting element comprising:
- a first electrode electrically connected to one of the second source electrode and the second drain electrode;
- a partition wall over the first electrode;
- an organic compound layer over the first electrode and the partition wall;
- and
- a second electrode over the organic compound layer,
- wherein the gate electrode is electrically connected to one of the first source electrode and the first drain electrode, and
- wherein the partition wall is in direct contact with the gate insulating layer.
15 more elements
A light-emitting display device comprising a pixel over a flexible substrate, the pixel comprising:
- a first transistor comprising:
- a first oxide semiconductor layer;
- and
- a first source electrode and a first drain electrode which are electrically connected to the first oxide semiconductor layer;
- a second transistor comprising:
- a gate electrode;
- a gate insulating layer in direct contact with the gate electrode;
- and
- a second source electrode and a second drain electrode with a second oxide semiconductor layer between the gate insulating layer and the second source electrode and between the gate insulating layer and the second drain electrode, wherein the second source electrode and the second drain electrode are electrically connected to the second oxide semiconductor layer;
- a light-emitting element comprising:
- a first electrode electrically connected to one of the second source electrode and the second drain electrode;
- a partition wall over the first electrode;
- an organic compound layer over the first electrode and the partition wall;
- and
- a second electrode over the organic compound layer;
- and
- a capacitor comprising:
- a capacitor wiring electrically connected to the gate electrode;
- and
- a dielectric layer over the capacitor wiring,
- wherein the gate electrode is electrically connected to one of the first source electrode and the first drain electrode, and
- wherein the partition wall is in direct contact with the gate insulating layer.
19 more elements
A light-emitting device comprising:
- a first transistor over a substrate, the first transistor comprising:
- a first oxide semiconductor layer;
- and
- a first source electrode and a first drain electrode which are electrically connected to the first oxide semiconductor layer;
- a second transistor over the substrate, the second transistor comprising:
- a gate electrode;
- a gate insulating layer over the gate electrode;
- a second source electrode and a second drain electrode with a second oxide semiconductor layer between the gate insulating layer and the second source electrode and between the gate insulating layer and the second drain electrode, wherein the second source electrode and the second drain electrode are electrically connected to the second oxide semiconductor layer;
- and
- a light-emitting element comprising:
- a first electrode electrically connected to one of the second source electrode and the second drain electrode;
- a partition wall over the first electrode;
- an organic compound layer over the first electrode and the partition wall;
- and
- a second electrode over the organic compound layer,
- wherein the gate electrode is electrically connected to one of the first source electrode and the first drain electrode, and
- wherein the partition wall is in direct contact with the gate insulating layer.
14 more elements
A light-emitting device comprising:
- a transistor over a substrate, the transistor comprising:
- a gate electrode;
- a gate insulating layer over the gate electrode;
- a source electrode and a drain electrode with an oxide semiconductor layer between the gate insulating layer and the source electrode and between the gate insulating layer and the drain electrode, wherein the source electrode and the drain electrode are electrically connected to the oxide semiconductor layer;
- and
- a light-emitting element comprising:
- a first electrode electrically connected to one of the source electrode and the drain electrode;
- a partition wall over the first electrode;
- an organic compound layer over the first electrode and the partition wall;
- and
- a second electrode over the organic compound layer,
- wherein the partition wall is in direct contact with the gate insulating layer.
9 more elements
Dependencies are inferred from the claim text.