TFT structure and LCD device
OwnerChihyuan Tsenginventor
Life of this patent
Estimating the term…
Abstract
A thin film transistor (TFT) structure includes a first metal layer. The first metal layer is configured with an insulating layer, a second metal layer covers a surface of the insulating layer, an area of the second metal layer that corresponds to an area above the first metal layer is configured with a gap. An area of the insulating layer that corresponds to the gap is configured with a groove. An active layer made of an indium gallium zinc oxide (IGZO) covers surfaces of the second metal layer, the gap, and the groove.
Claims19
A thin film transistor (TFT) structure, comprising:
- a first metal layer;
- wherein the first metal layer is configured with an insulating layer, a second metal layer covers a surface of the insulating layer;
- an area of the second metal layer that corresponds to an area above the first metal layer is configured with a gap;
- wherein an area of the insulating layer that corresponds to the gap is configured with a groove;
- wherein an active layer made of an indium gallium zinc oxide (IGZO) covers surfaces of the second metal layer, the gap, and the groove.
A liquid crystal display (LCD) device, comprising:
- a thin film transistor (TFT) structure;
- wherein the TFT structure comprises a first metal layer, the first metal layer is configured with an insulating layer;
- wherein a second metal layer covers a surface of the insulating layer;
- an area of the second metal layer that corresponds to an area above the first metal layer is configured with a gap;
- wherein an area of the insulating layer that corresponds to the gap is configured with a groove;
- wherein an active layer made of an indium gallium zinc oxide (IGZO) covers surfaces of the second metal layer, the gap, and the groove.
A method for manufacturing a thin film transistor (TFT), comprising:
- A:
- sequentially forming a first metal layer, an insulating layer, and a second metal layer on a substrate;
- B:
- etching a gap on a surface of the second metal layer, the gap used as a boundary by the second metal layer, the second metal layer of a first end of the gap is a source electrode metal layer of the TFT, and the second metal layer of a second end of the gap is a drain electrode metal layer of the TFT;
- C:
- etching a groove on a surface of the insulating layer by using the source electrode metal layer and the drain electrode metal layer as protection layer;
- D:
- applying an active layer made of an indium gallium zinc oxide (IGZO) to surfaces of the second metal layer, the gap, and the groove.
Dependencies are inferred from the claim text.