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US 8,912,530 B2Granted
Electrode structure including graphene and field effect transistor having the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHee-jun Yang, Seong-jun Park, Hyun-jong Chung, Jin-seong Heo
Life of this patent
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Abstract
According to example embodiments, an electrode structure includes a graphene layer on a semiconductor layer and an electrode containing metal on the graphene layer. A field effect transistor (FET) may include the electrode structure.
Claims25
An electrode structure comprising:
- a graphene layer on a semiconductor layer;
- and
- an electrode containing metal directly on the graphene layer,
- the graphene layer having no band gap, and
- the graphene layer being between the semiconductor layer and an entire surface of the electrode containing metal facing the semiconductor layer so the electrode containing metal does not directly contact the semiconductor layer.
2 more elements
A field effect transistor (FET) comprising:
- a semiconductor substrate doped with a first impurity,
- the semiconductor substrate including a source region and a drain region doped with a second impurity,
- the second impurity having an opposite polarity to a polarity of the first impurity;
- a first graphene layer and a second graphene layer on the semiconductor substrate and spaced apart from each other,
- the first graphene layer on the source region and the second graphene layer on the drain region of the substrate;
- a source electrode containing metal and a drain electrode containing metal that are respectively on the first graphene layer and the second graphene layer,
- the first graphene layer contacting at least one of the substrate and the source electrode,
- the second graphene layer contacting at least one of the substrate and the drain electrode;
- a gate insulating layer between the source electrode and the drain electrode on the semiconductor layer;
- and
- a gate electrode on the gate insulating layer.
8 more elements
A contact comprising:
- a graphene layer sandwiched between a doped-semiconductor structure and an entire surface of an electrode containing metal facing the doped-semiconductor structure, the graphene layer being configured to change a Schottky energy barrier between the doped-semiconductor structure and the electrode containing metal, and
- the graphene layer having no band gap.
Dependencies are inferred from the claim text.