Method for forming a cleaved facet of semiconductor device
AssigneeLG Innotek Co., Ltd.
InventorsYoung Hun Han, Dong Han Yoo
Life of this patent
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Abstract
Embodiments disclose a method including forming at least one compound semiconductor layer on a top r-face of a substrate, forming a line for cleavage on a bottom r-face of the substrate along a length of a guide line, wherein the guide line extends in a (11-20)-plane direction of the substrate, wherein the guide line extends from one portion of an edge to another portion of the edge, and wherein the edge is disposed between the top r-face and the bottom r-face of the substrate, and applying a force to the bottom r-face of the substrate to cleave the substrate along the line for cleavage in the (11-20)-plane direction and to form a cleaved facet along a m-plane of the at least one compound semiconductor.
Claims20
A method for forming a cleaved facet of a semiconductor device, the method comprising:
- forming at least one compound semiconductor layer on a top r-face of a substrate;
- forming a line for cleavage on a bottom r-face of the substrate along a length of a guide line,
- wherein the guide line extends in a (11-20)-plane direction of the substrate,
- wherein the guide line extends from one portion of an edge to another portion of the edge, and
- wherein the edge is disposed between the top r-face and the bottom r-face of the substrate, and
- applying a force to the bottom r-face of the substrate to cleave the substrate along the line for cleavage in the (11-20)-plane direction and to form a cleaved facet along a m-plane of the at least one compound semiconductor.
A method for forming a cleaved facet of a semiconductor device, the method comprising:
- forming at least one compound semiconductor layer on a top r-face of a substrate;
- forming a line for cleavage on a top surface of the at least one compound semiconductor layer along a length of a guide line,
- wherein the guide line extends in a m-plane direction of the at least one compound semiconductor layer,
- wherein the guide line extends from one portion of an edge to another portion of the edge, and
- wherein the edge is disposed between the top surface and the bottom surface of the at least one compound semiconductor layer, and
- applying a force to the top surface of the at least one compound semiconductor layer to form a cleaved facet by cleaving the at least one compound semiconductor layer along the line for cleavage in the m-plane direction of the at least one compound semiconductor layer and to cleave the substrate along a (11-20)-plane of the substrate.
Dependencies are inferred from the claim text.