Multi-quantum well structure and light emitting diode having the same
AssigneeAdvanced Optoelectronic Technology, Inc.
InventorsShih-Cheng Huang, Ya-Wen Lin, Po-Min Tu
Life of this patent
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Abstract
A multi-quantum well structure includes two first barrier layers, two well layers sandwiched between the two first barrier layers, and a doped second barrier layer sandwiched between the two well layers. The second barrier layer has its conduction band and forbidden band gradually transiting to those of one of the well layers, and a dopant concentration of the second barrier layer gradually changes along a direction from one well layer to the other. The invention also relates to a light emitting diode structure having the multi-quantum well structure.
Claims13
A multi-quantum well structure for a light emitting diode comprising:
- two first barrier layers;
- two well layers sandwich between the two first barrier layers;
- a doped second barrier sandwiched between the two well layers, the second barrier layer having its conduction band and forbidden band gradually transiting to those of the well layer adjacent to the second barrier layer respectively, and a dopant concentration of the second barrier layer gradually changing along a direction from one well layer to the other well layer.
A light emitting diode (LED) structure comprising:
- a first conductive semiconductor layer;
- a second conductive semiconductor layer;
- at least one multi-quantum well structure sandwiched between the first conductive semiconductor well structure and the second conductive semiconductor layer, the multi-quantum well structure comprising:
- two first barrier layers;
- two well layers sandwich between the two first barrier layers;
- a doped second barrier sandwiched between the two well layers, the second barrier layer having its conduction band and forbidden band gradually transiting to those of the well layer adjacent to the second barrier layer respectively, and a dopant concentration of the second barrier layer gradually changing along a direction from one well layer to the other well layer.
A light emitting diode (LED) comprising:
- an N-type semiconductor layer;
- a P-type semiconductor layer;
- a multi-quantum well structure sandwiched between the N-type semiconductor layer and the P-type semiconductor layer, the multi-quantum well structure comprising:
- two first barrier layers;
- a plurality of well layers sandwiched between the two first barrier layers;
- a plurality of doped second barrier layers, each barrier layer being sandwiched between two adjacent well layers, the second barrier layer having its conduction band and forbidden band gradually transiting to those of the well layer adjacent to the second barrier layer respectively, and a dopant concentration of the second barrier layer nearest to the P-type semiconductor layer gradually changing along a direction from one well layer to the other well layer nearest to the second barrier layer.
Dependencies are inferred from the claim text.