Nanodevice arrays for electrical energy storage, capture and management and method for their formation

A vertical nanotube device, comprising:

• a column disposed in an anodic oxide material extending from a first distal end of the anodic oxide material to a second distal end of the anodic oxide material;
• a first material disposed within the column;
• a second material disposed within the column;
• and
• a third material disposed between the first material and the second material,
• wherein the first material fills the first distal end of the column and extends to the second distal end of the column along inner walls of the column,
• wherein the second material fills the first distal end of the column and extends to the second distal end of the column within the first material,
• wherein both the first material and the second material are exposed at opposite distal ends of the column,
• wherein the vertical nanotube device is perpendicular or substantially perpendicular to a substrate of the vertical nanotube device, and
• wherein the first material and the second material are concentrically disposed within the column.

A vertical nanotube device, comprising:

• a column disposed in an anodic oxide material extending from a first distal end of the anodic oxide material to a second distal end of the anodic oxide material;
• a first material disposed within the column;
• a second material disposed within the column;
• and
• a third material disposed between the first material and the second material,
• wherein the first material fills the first distal end of the column and extends to the second distal end of the column along inner walls of the column,
• wherein the second material fills the first distal end of the column and extends to the second distal end of the column within the first material,
• wherein both the first material and the second material are exposed at opposite distal ends of the column,
• wherein the vertical nanotube device is perpendicular or substantially perpendicular to a substrate of the vertical nanotube device, and
• wherein the third material comprises one of an electrical insulator and an electrolyte.

A vertical nanotube device, comprising:

• a column disposed in an anodic oxide material extending from a first distal end of the anodic oxide material to a second distal end of the anodic oxide material;
• a first material disposed within the column;
• a second material disposed within the column;
• and
• a third material disposed between the first material and the second material,
• wherein the first material fills the first distal end of the column and extends to the second distal end of the column along inner walls of the column,
• wherein the second material fills the first distal end of the column and extends to the second distal end of the column within the first material,
• wherein both the first material and the second material are exposed at opposite distal ends of the column,
• wherein the vertical nanotube device is perpendicular or substantially perpendicular to a substrate of the vertical nanotube device, and
• wherein one of the first material and the second material comprises an n-type semiconductor material, and wherein the other of the first material and the second material comprises a p-type semiconductor material.