Variable resistive memory device and method of fabricating the same

A method of fabricating a variable resistive memory device, the method comprising:

• forming an interlayer insulating film, the interlayer insulating film having an opening therein, the opening exposing a surface of a first electrode which is disposed at a bottom of the opening;
• forming a sacrificial film on an inner side surface of the opening, the sacrificial film defining a groove through which a surface of the first electrode is exposed;
• filling the groove with a variable resistive material;
• forming a variable resistive layer by removing the variable resistive material film to expose the sacrificial film;
• removing the sacrificial film to form a gap between the inner side surface of the opening and a sidewall of the variable resistive layer;
• and
• forming a second electrode on the variable resistive layer.