Organoaminosilane precursors and methods for depositing films comprising same

An organoaminosilane precursor represented by the following formula I:

• wherein R1 in formula I is independently selected from a hydrogen atom, a linear or a branched C1 to C6 alkyl group, a linear or a branched C2 to C6 alkenyl group, a linear or a branched C2 to C6 alkynyl group, a C1 to C6 alkoxy group, a C1 to C6 dialkylamino group and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5;
• and R2 is independently selected from a hydrogen atom, a linear or branched C1 to C6 alkyl group, a linear or a branched C2 to C6 alkenyl group, a linear or branched C2 to C6 alkynyl group, a C1 to C6 alkoxy group, a C1 to C6 alkyl group with a C1 to C6 alkoxy group attached thereto, a C1 to C6 alkyl group with a C1 to C6 dialkylamino group attached thereto, a C1 to C6 dialkylamino group, a C6 to C10 aryl group, a linear or branched C1 to C6 fluorinated alkyl group, and a C4 to C10 cyclic alkyl group, wherein the organoaminosilane precursor comprises at least one selected from the group consisting of phenylmethylaminosilane, phenylethylaminosilane, phenyl-iso-propylaminosilane, phenylallylaminosilane, m-tolylmethylaminosilane, N-silyl-tetrahydroquinoline, N-silyl-3-anilinopropionitrile, N-silyl-N-phenylglycinonitrile, N-silylcarbazole, phenylcyclohexylaminosilane, N-silyl-2-methylindoline, N-silylbenzomorpholine, N-silylindole, N-silyl-2-methylindole, N-silyl-3-methylindole, o-tolylethylaminosilane, p-tolylethylaminosilane, m-tolylethylaminosilane, p-tolylethylaminosilane, o-tolylethylaminosilane, and N-silyl-1,2,3,4-Tetrahydro-2-methylquinoline.

A method for forming a dielectric film on at least one surface of a substrate by a deposition process chosen from a chemical vapor deposition process and an atomic layer deposition process, the method comprising:

• providing the at least one surface of the substrate in a reaction chamber;
• introducing at least one organoaminosilane precursor having the following formula I in the reactor:
• wherein R1 in formula I is independently selected from a hydrogen atom, a linear or a branched C1 to C6 alkyl group, a linear or a branched C2 to C6 alkenyl group, a linear or a branched C2 to C6 alkynyl group, a C1 to C6 alkoxy group, a C1 to C6 dialkylamino group and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5;
• and R2 is independently selected from a linear or branched C1 to C6 alkyl group, a linear or a branched C2 to C6 alkenyl group, a linear or branched C2 to C6 alkynyl group, a C1 to C6 alkoxy group, a C1 to C6 alkyl group with a C1 to C6 alkoxy group attached thereto, a C1 to C6 alkyl group with a C1 to C6 dialkylamino group attached thereto, a C1 to C6 dialkylamino group, a C7 to C10 aryl group, a linear or branched C1 to C6 fluorinated alkyl group, and a C4 to C10 cyclic alkyl group;
• introducing a nitrogen-containing source into the reactor wherein the at least one organoaminosilane precursor and the nitrogen-containing source react to the dielectric films on the at least one surface.

A method of forming a dielectric film via an atomic layer deposition (ALD) process, the method comprising the steps of:

• a. providing a substrate in an ALD reactor;
• b. providing in the ALD reactor an at least one organoaminosilane precursor having the following formula I:
• wherein R1 in formula I is independently selected from a hydrogen atom, a linear or a branched C1 to C6 alkyl group, a linear or a branched C2 to C6 alkenyl group, a linear or a branched C2 to C6 alkynyl group, a C1 to C6 alkoxy group, a C1 to C6 dialkylamino group and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5;
• and R2 is independently selected from a linear or branched C1 to C6 alkyl group, a linear or a branched C2 to C6 alkenyl group, a linear or branched C2 to C6 alkynyl group, a C1 to C6 alkoxy group, a C1 to C6 alkyl group with a C1 to C6 alkoxy group attached thereto, a C1 to C6 alkyl group with a C1 to C6 dialkylamino group attached thereto, a C1 to C6 dialkylamino group, a C7 to C10 aryl group, a linear or branched C1 to C6 fluorinated alkyl group, and a C4 to C10 cyclic alkyl group;
• c. purging the ALD reactor with an inert gas;
• d. providing a nitrogen-containing source in the ALD reactor;
• e. purging the ALD reactor with an inert gas;
• and
• f. repeating the steps b through e until a desired thickness of the dielectric film is obtained.

A method of forming a dielectric film onto at least a surface of a substrate using a plasma enhanced atomic layer deposition (PEALD) process, the method comprising:

• a. providing a substrate in an ALD reactor;
• b. providing in the ALD reactor an at least one organoaminosilane precursor having the following formula I:
• wherein R1 in formula I is independently selected from a hydrogen atom, a linear or a branched C1 to C6 alkyl group, a linear or a branched C2 to C6 alkenyl group, a linear or a branched C2 to C6 alkynyl group, a C1 to C6 alkoxy group, a C1 to C6 dialkylamino group and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5;
• and R2 is independently selected from a linear or branched C1 to C6 alkyl group, a linear or a branched C2 to C6 alkenyl group, a linear or branched C2 to C6 alkynyl group, a C1 to C6 alkoxy group, a C1 to C6 alkyl group with a C1 to C6 alkoxy group attached thereto, a C1 to C6 alkyl group with a C1 to C6 dialkylamino group attached thereto, a C1 to C6 dialkylamino group, a C7 to C10 aryl group, a linear or branched C1 to C6 fluorinated alkyl group, and a C4 to C10 cyclic alkyl group;
• c. purging the ALD reactor with an inert gas;
• d. providing a plasma nitrogen-containing source in the ALD reactor;
• e. purging the ALD reactor with an inert gas;
• and
• f. repeating the steps b through e until a desired thickness of the dielectric film is obtained.

A method for forming a silicon oxide film on a substrate comprising:

• forming via vapor deposition of the silicon oxide film on the substrate from a composition comprising at least one organoaminosilane precursor having the following Formula I:
• wherein R1 in formula I is independently selected from a hydrogen atom, a linear or a branched C1 to C6 alkyl group, a linear or a branched C2 to C6 alkenyl group, a linear or a branched C2 to C6 alkynyl group, a C1 to C6 alkoxy group, a C1 to C6 dialkylamino group and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5;
• and R2 is independently selected from a linear or branched C1 to C6 alkyl group, a linear or a branched C2 to C6 alkenyl group, a linear or branched C2 to C6 alkynyl group, a C1 to C6 alkoxy group, a C1 to C6 alkyl group with a C1 to C6 alkoxy group attached thereto, a C1 to C6 alkyl group with a C1 to C6 dialkylamino group attached thereto, a C1 to C6 dialkylamino group, a C7 to C10 aryl group, a linear or branched C1 to C6 fluorinated alkyl group, and a C4 to C10 cyclic alkyl group,
• wherein the vapor deposition is at least one selected from chemical vapor deposition, low pressure vapor deposition, plasma enhanced chemical vapor deposition, cyclic chemical vapor deposition, plasma enhanced cyclic chemical vapor deposition, atomic layer deposition, and plasma enhanced atomic layer deposition.

A method for forming a silicon oxide film on a substrate comprising:

• introducing an organoaminosilane represented by the following formula I:
• wherein R1 in formula I is independently selected from a hydrogen atom, a linear or a branched C1 to C6 alkyl group, a linear or a branched C2 to C6 alkenyl group, a linear or a branched C2 to C6 alkynyl group, a C1 to C6 alkoxy group, a C1 to C6 dialkylamino group and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5;
• and R2 is independently selected from a linear or branched C1 to C6 alkyl group, a linear or a branched C2 to C6 alkenyl group, a linear or branched C2 to C6 alkynyl group, a C1 to C6 alkoxy group, a C1 to C6 alkyl group with a C1 to C6 alkoxy group attached thereto, a C1 to C6 alkyl group with a C1 to C6 dialkylamino group attached thereto, a C1 to C6 dialkylamino group, a C7 to C10 aryl group, a linear or branched C1 to C6 fluorinated alkyl group, and a C4 to C10 cyclic alkyl group;
• introducing at least one oxidizing agent into the reactor wherein the at least one oxidizing agent reacts with the organoaminosilane to provide the silicon oxide film on the substrate.

A method for forming a silicon oxide film on a substrate wherein the film comprises a thickness, the method comprising:

• a. introducing an at least one organoaminosilane represented by the formula I into a deposition chamber:
• wherein R1 in formula I is independently selected from a hydrogen atom, a linear or a branched C1 to C6 alkyl group, a linear or a branched C2 to C6 alkenyl group, a linear or a branched C2 to C6 alkynyl group, a C1 to C6 alkoxy group, a C1 to C6 dialkylamino group and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5;
• and R2 is independently selected from a linear or branched C1 to C6 alkyl group, a linear or a branched C2 to C6 alkenyl group, a linear or branched C2 to C6 alkynyl group, a C1 to C6 alkoxy group, a C1 to C6 alkyl group with a C1 to C6 alkoxy group attached thereto, a C1 to C6 alkyl group with a C1 to C6 dialkylamino group attached thereto, a C1 to C6 dialkylamino group, a C7 to C10 aryl group, a linear or branched C1 to C6 fluorinated alkyl group, and a C4 to C10 cyclic alkyl group;
• b. chemisorbing the at least one organoaminosilane precursor onto the substrate;
• c. purging away the unreacted at least one organoaminosilane precursor using a purge gas;
• d. providing an oxygen source to the organoaminosilane precursor onto the heated substrate to react with the sorbed at least one organoaminosilane precursor;
• and
• e. optionally purging away any unreacted oxygen source.

A vessel which is used to deliver a precursor for the deposition of a silicon-containing film, the vessel comprising:

• the precursor represented by the following formula I:
• wherein R1 in formula I is independently selected from a hydrogen atom, a linear or a branched C1 to C6 alkyl group, a linear or a branched C2 to C6 alkenyl group, a linear or a branched C2 to C6 alkynyl group, a C1 to C6 alkoxy group, a C1 to C6 dialkylamino group and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5;
• and R2 is independently selected from a linear or branched C1 to C6 alkyl group, a linear or a branched C2 to C6 alkenyl group, a linear or branched C2 to C6 alkynyl group, a C1 to C6 alkoxy group, a C1 to C6 alkyl group with a C1 to C6 alkoxy group attached thereto, a C1 to C6 alkyl group with a C1 to C6 dialkylamino group attached thereto, a C1 to C6 dialkylamino group, a C7 to C10 aryl group, a linear or branched C1 to C6 fluorinated alkyl group, and a C4 to C10 cyclic alkyl group;
• and
• wherein the purity of the precursor is about 98% or greater.