Manufacturing method of complementary metal oxide semiconductor

Abstract

A manufacturing method of a complementary metal oxide semiconductor includes steps as following: providing a semiconductor substrate; forming a metal oxide semiconductor region having an oxide layer, which has a thickness greater than 1 micrometer, on a first surface of the semiconductor substrate; forming the oxide layer as an isolation region of the metal oxide semiconductor region and a heat-isolation region of a poly heater; forming a poly gate of the metal oxide semiconductor region as at least a portion of the poly heater; forming an interlayer dielectric layer; and processing a selenium etching. Under this circumstance, the oxide layer is applied so as to be the isolation region of the metal oxide semiconductor region and a heat-isolation region of the poly heater, the poly gate of the metal oxide semiconductor region is sufficiently utilized as the poly heater, and the heat-dissipation of the poly heater is optimized.

Dependencies are inferred from the claim text.