Backside metal ground plane with improved metal adhesion and design structures
AssigneeInternational Business Machines Corporation
InventorsJay S. Burnham, Damyon L. Corbin, George A. Dunbar, III, Jeffrey P. Gambino, John C. Hall, Kenneth F. McAvey, Jr., Charles F. Musante, Anthony K. Stamper
Life of this patent
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Abstract
A backside metal ground plane with improved metal adhesion and methods of manufacture are disclosed herein. The method includes forming at least one through silicon via (TSV) in a substrate. The method further includes forming an oxide layer on a backside of the substrate. The method further includes forming a metalized ground plane on the oxide layer and in electrical contact with an exposed portion of the at least one TSV.
Claims23
A method comprising:
- forming at least one through silicon via (TSV) in a substrate;
- forming an oxide layer on a backside of the substrate;
- and
- forming a metalized ground plane on the oxide layer and in electrical contact with an exposed portion of the at least one TSV,
- wherein the forming of the metalized ground plane eliminates peeling when the substrate is diced.
A method comprising:
- forming at least one through silicon via (TSV) in a substrate;
- forming an oxide layer on a backside of the substrate;
- and
- forming a metalized ground plane on the oxide layer and in electrical contact with an exposed portion of the at least one TSV,
- wherein the forming the at least one TSV comprises a polishing and grinding process of the substrate, which forms the oxide layer.
A method comprising:
- forming at least one through silicon via (TSV) in a substrate;
- forming an oxide layer on a backside of the substrate;
- and
- forming a metalized ground plane on the oxide layer and in electrical contact with an exposed portion of the at least one TSV,
- wherein the forming the oxide layer comprises an oxide deposition process using oxygen plasma.
A method comprising:
- forming at least one through silicon via (TSV) in a substrate;
- forming an oxide layer on a backside of the substrate;
- and
- forming a metalized ground plane on the oxide layer and in electrical contact with an exposed portion of the at least one TSV,
- wherein the forming the oxide layer comprises a low temperature thermal oxidation process at 100° C., in air.
A method comprising:
- forming at least one through silicon via (TSV) in a substrate;
- forming an oxide layer on a backside of the substrate;
- forming a metalized ground plane on the oxide layer and in electrical contact with an exposed portion of the at least one TSV;
- and
- cleaning impurities from exposed portions of the at least one TSV, using a low energy Ar sputter process.
A method comprising:
- forming at least one through silicon via (TSV) in a substrate;
- forming an oxide layer on a backside of the substrate;
- and
- forming a metalized ground plane on the oxide layer and in electrical contact with an exposed portion of the at least one TSV,
- wherein the forming the at least one TSV forms a recessed portion of the substrate, adjacent to the at least one TSV.
A method comprising:
- forming a plurality of through silicon vias (TSVs) in a substrate, comprising:
- forming openings partially within the substrate;
- filling the openings with a metal;
- and
- thinning the substrate to expose a backside of the metal within the via, such that the metal via extends entirely through the substrate, wherein the thinning process results in an oxide layer formed on a backside of the substrate;
- and
- forming a backside metal on the oxide layer such that the backside metal is in direct contact with the plurality of TSVs and the oxide layer.
A structure, comprising:
- a substrate comprising at least one through silicon via extending entirely through the substrate;
- an oxide layer on a backside of the substrate;
- a recessed portion of the substrate adjacent to the at least one through silicon via;
- and
- a metalized ground plane on a backside of the substrate, directly in contact with metal of the at least one through silicon via and the oxide layer on the backside.
Dependencies are inferred from the claim text.