Method for manufacturing a semiconductor device including a stacked body comprising pluralities of first and second metallic conductive layers

A method for manufacturing a semiconductor device, comprising:

• forming a stacked body on a substrate, the stacked body including a plurality of first conductive layers including a metallic element as a main component and a plurality of second conductive layers including a metallic element as a main component provided respectively between the first conductive layers;
• forming a first insulating film in a region of a portion of the stacked body to pierce the stacked body and extend in a first direction parallel to a major surface of the substrate;
• forming a plurality of second insulating films to pierce the stacked body and extend from the first insulating film in a second direction intersecting the first direction in a plane parallel to the major surface of the substrate;
• forming a third insulating film to reach the first conductive layer of a different layer in each region of the stacked body between the second insulating films adjacent to each other in the first direction;
• making a hole to pierce the stacked body on an outer side of a region of the stacked body enclosed with the first insulating film, the second insulating films, and the third insulating film;
• removing the second conductive layers other than the second conductive layers stacked in contact with the first conductive layers between the first insulating film and the third insulating film by etching via the hole;
• forming a fourth insulating film via the hole in the gap made by the second conductive layers being removed;
• and
• forming a contact electrode on the first conductive layer of the uppermost layer of the region enclosed with the first insulating film, the second insulating films, and the third insulating film to connect to the first conductive layer of the uppermost layer.