Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorFumio Sasaki
Life of this patent
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Abstract
A semiconductor device has a gate electrode including a leg part and a canopy part. A barrier layer is formed on a bottom face of the leg part of the gate electrode. In addition, on the lower surface of the barrier layer, a Schottky metal layer with an electrode width wider than the electrode width of the barrier layer is formed to have a Schottky junction with a semiconductor layer.
Claims20
A semiconductor device, comprising:
- a semiconductor layer;
- a drain electrode and a source electrode formed in mutually separated positions on a surface of the semiconductor layer and respectively make ohmic contact with the semiconductor layer;
- and
- a gate electrode comprising a leg part and a canopy part provided on top of the leg part and having a width wider than that of the leg part, the gate electrode further comprising a barrier layer formed on the bottom face of the leg part and a Schottky metal layer that is in contact with a lower surface of the barrier layer and forms a Schottky junction with the semiconductor layer,
- wherein the Schottky metal layer that forms the Schottky junction is wider than the barrier layer formed on the bottom face of the leg part, and
- the gate electrode is Y-shaped.
A semiconductor device, comprising:
- a semiconductor layer;
- a drain electrode and a source electrode formed on a surface of the semiconductor layer;
- and
- a gate electrode including a metal layer having curved side surfaces, an upper portion, and a bottom portion that is narrower than the top portion, a Schottky metal layer that forms a Schottky junction with the semiconductor layer, and a barrier layer formed between the Schottky metal layer and the bottom face of the bottom portion,
- wherein the Schottky metal layer that forms the Schottky junction is wider than the barrier layer formed on the bottom face of the bottom portion, and
- the gate electrode is Y-shaped.
The semiconductor device according to 11, wherein the Schottky junction layer covers the curved side surfaces of the barrier layer partially.
A method of manufacturing a semiconductor device, comprising:
- forming a semiconductor layer on a semiconductor substrate;
- forming drain and source electrodes on a surface of the semiconductor layer;
- forming a recess portion on the semiconductor layer;
- forming a Schottky metal layer that forms a Schottky junction with the semiconductor layer at the recess portion;
- forming a barrier layer on the Schottky metal layer;
- and
- forming a metal layer on the barrier layer,
- wherein the Schottky metal layer that forms the Schottky junction is wider than the barrier layer formed on a bottom face of the metal layer, and
- the Schottky metal layer, the barrier layer, and the metal layer form a Y-shaped electrode.
Dependencies are inferred from the claim text.