Manufacturing method of the semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
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Abstract
The semiconductor device is manufactured through the following steps: after first heat treatment is performed on an oxide semiconductor film, the oxide semiconductor film is processed to form an oxide semiconductor layer; immediately after that, side walls of the oxide semiconductor layer are covered with an insulating oxide; and in second heat treatment, the side surfaces of the oxide semiconductor layer are prevented from being exposed to a vacuum and defects (oxygen deficiency) in the oxide semiconductor layer are reduced.
Claims24
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a first insulating film over a substrate;
- forming a first conductive layer and a second conductive layer over the first insulating film;
- forming a first oxide semiconductor film over and in contact with the first insulating film, the first conductive layer, and the second conductive layer;
- performing a first heat treatment on the substrate so that the first oxide semiconductor film is processed into a second oxide semiconductor film;
- patterning the second oxide semiconductor film to form an oxide semiconductor layer;
- forming a second insulating film covering the oxide semiconductor layer;
- forming a third conductive layer over the second insulating film;
- and
- performing a second heat treatment on the substrate after forming the second insulating film,
- wherein the first insulating film is formed using an insulating oxide containing more oxygen than oxygen in a stoichiometric proportion.
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a first insulating film over a substrate;
- forming a first conductive layer and a second conductive layer over the first insulating film;
- forming a first oxide semiconductor film over and in contact with the first insulating film, the first conductive layer, and the second conductive layer;
- performing a first heat treatment on the substrate so that the first oxide semiconductor film is processed into a second oxide semiconductor film;
- forming an etching mask over the second oxide semiconductor film;
- forming an oxide semiconductor layer by patterning the second oxide semiconductor film using the etching mask;
- removing the etching mask;
- forming a second insulating film covering the oxide semiconductor layer;
- forming a third conductive layer over the second insulating film;
- and
- performing a second heat treatment on the substrate after forming the second insulating film,
- wherein the first insulating film is formed using an insulating oxide containing more oxygen than oxygen in a stoichiometric proportion.
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a first insulating film over a substrate, the first insulating film containing more oxygen than oxygen in a stoichiometric proportion;
- forming a first conductive film over the first insulating film;
- forming a first etching mask over the first conductive film;
- forming a first conductive layer and a second conductive layer by patterning the first conductive film using the first etching mask;
- removing the first etching mask;
- forming a first oxide semiconductor film over and in contact with the first insulating film, the first conductive layer, and the second conductive layer;
- performing a first heat treatment on the substrate so that the first oxide semiconductor film is processed into a second oxide semiconductor film;
- forming a second etching mask over the second oxide semiconductor film;
- forming an oxide semiconductor layer by patterning the second oxide semiconductor film using the second etching mask;
- removing the second etching mask;
- forming a second insulating film covering the oxide semiconductor layer;
- forming a third conductive film over the second insulating film;
- forming a third etching mask over the third conductive film;
- forming a third conductive layer by patterning the third conductive film using the third etching mask;
- removing the third etching mask;
- performing ion implantation on the oxide semiconductor layer using the third conductive layer as a mask;
- and
- performing a second heat treatment on the substrate after forming the second insulating film.
Dependencies are inferred from the claim text.