Hybrid laser and plasma etch wafer dicing using substrate carrier

A method of dicing a semiconductor wafer comprising a front surface having a plurality of integrated circuits thereon and having a back surface opposite the front surface, the method comprising:

• forming a mask on the front surface of the semiconductor wafer, the mask comprising a layer covering and protecting the integrated circuits, and the semiconductor wafer supported by a substrate carrier;
• patterning the mask and a portion of the semiconductor wafer with a laser scribing process to provide a patterned mask, and to form trenches partially into but not through the semiconductor wafer between the integrated circuits;
• covering a portion of the substrate carrier with a protective plate, the protective plate leaving exposed at least a portion of the patterned mask;
• and
• subsequent to covering the portion of the substrate carrier with the protective plate, etching, while supported by the substrate carrier, the semiconductor wafer through the trenches to singulate the integrated circuits.

A method of dicing a semiconductor wafer comprising a plurality of integrated circuits, the method comprising:

• forming a mask above the semiconductor wafer, the mask comprising a layer covering and protecting the integrated circuits, and the semiconductor wafer supported by a substrate carrier;
• patterning the mask with a laser scribing process to provide a patterned mask having a top surface with gaps, exposing regions of the semiconductor wafer between the integrated circuits;
• covering a portion of the substrate carrier with a protective plate, the protective plate leaving exposed at least a portion of the top surface of the patterned mask and at least a portion of the exposed regions of the semiconductor wafer between the integrated circuits;
• and, subsequently,
• etching, while supported by the substrate carrier, the semiconductor wafer through the gaps in the patterned mask to singulate the integrated circuits.