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US 8,912,074 B2Granted
Method of forming shallow trench isolations
AssigneeUnited Microelectronics Corp.
InventorsEn-Chiuan Liou, Po-Chao Tsao, Chia-Jui Liang, Jia-Rong Wu
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Abstract
A method of forming shallow trench isolation structures including the steps of forming a trench in a substrate, filling a first insulating layer in the lower portion of the trench and defining a recess at the upper portion of the trench, forming a buffer layer on the sidewall of the recess, filling a second insulating layer in the recess, and performing a steam annealing process to transform the substrate surrounding the first insulating layer into an oxide layer.
Claims7
A method of forming shallow trench isolation structures, comprising the steps of:
- forming a trench in a substrate;
- filling a first insulating layer in the lower portion of said trench and defining a recess at the upper portion of said trench;
- forming a buffer layer on the sidewall of said recess;
- filling a second insulating layer in said recess;
- and
- performing a steam annealing process to transform said substrate surrounding said first insulating layer into an oxide layer.
3 more elements
Dependencies are inferred from the claim text.