Lateral double-diffused high voltage device
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsGuowei Zhang, Purakh Raj Verma
Life of this patent
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Abstract
A method of forming a device is disclosed. The method includes providing a substrate with a device region. The method also includes forming a transistor in the device region. The transistor includes a gate having first and second sides along a gate direction. The transistor also includes a first doped region adjacent to a first side of the gate, a second doped region adjacent to a second side of the gate, and a channel under the gate. The transistor further includes a channel trench in the channel of the gate, wherein the channel trench is along a trench direction which is at an angle θ other than 90° with respect to the gate direction.
Claims19
A method of forming a device comprising:
- providing a substrate with a device region;
- and
- forming a transistor in the device region, wherein the transistor includes
- a gate trench,
- a gate disposed on the substrate and fills the gate trench, the gate having first and second sides along a gate direction,
- a first doped region adjacent to a first side of the gate,
- a second doped region adjacent to a second side of the gate,
- a channel under the gate,
- wherein the channel is along a gate trench direction which is at an angle θ other than 90° with respect to the gate direction, and
- an internal device isolation region along the trench direction in the substrate between the gate and the second doped region.
A method of forming a device comprising:
- providing a substrate with a device region;
- forming a transistor in the device region, wherein the transistor includes
- a gate having first and second sides along a gate direction,
- a first doped region adjacent to a first side of the gate,
- a second doped region adjacent to a second side of the gate,
- a channel under the gate, and
- a channel trench in the channel of the gate, wherein the channel trench is along a trench direction which is at an angle θ other than 90° with respect to the gate direction;
- forming an internal device isolation region along the trench direction in the substrate between the gate and the second doped region;
- and
- forming a drift well in the substrate adjacent to the second side of the gate, the drift well underlaps a portion of the gate with a first edge of the drift well beneath the gate.
A method of forming a device comprising:
- providing a substrate with a device region, the substrate comprises top and bottom surfaces;
- and
- forming a transistor in the device region, wherein the transistor includes,
- a gate trench,
- a gate disposed on the substrate and fills the gate trench, the gate having first and second sides along a gate direction,
- a first doped region adjacent to a first side of the gate,
- a second doped region adjacent to a second side of the gate,
- a channel under the gate, wherein the channel is along a gate trench direction which is at an angle θ other than 90° with respect to the gate direction, wherein the gate trench creates the channel having a first channel direction parallel to the top surface of the substrate and second channel direction along sidewalls of the gate trench, and
- an internal device isolation region along the trench direction in the substrate between the gate and the second doped region.
A semiconductor device comprising:
- a substrate having a device region;
- and
- a transistor in the device region, wherein the transistor includes
- a gate trench,
- a gate disposed on the substrate and fills the gate trench, the gate having first and second sides along a gate direction,
- a first doped region adjacent to a first side of the gate,
- a second doped region adjacent to a second side of the gate,
- a channel under the gate,
- wherein the channel is along a gate trench direction which is at an angle θ other than 90° with respect to the gate direction, and
- an internal device isolation region along the trench direction in the substrate between the gate and the second doped region.
Dependencies are inferred from the claim text.