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US 8,912,060 B2Granted
Method for manufacturing semiconductor device and apparatus for manufacturing same
AssigneeKabushiki Kaisha Toshiba
InventorsTsuneo Uenaka, Kazuyuki Higashi
Life of this patent
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Abstract
A method for manufacturing a semiconductor device includes: forming a first layer on a substrate; forming a first contact hole in the first layer; burying a sacrificial film in the first contact hole; forming a second layer on the first layer and the first contact hole after burying; forming a second contact hole reaching the sacrificial film in the second layer; removing the sacrificial film from the first contact hole via the second contact hole; and providing a contact electrode in the first contact hole and the second contact hole.
Claims13
A method for manufacturing a semiconductor device comprising:
- forming a first layer on a substrate;
- forming a first contact hole in the first layer;
- burying a sacrificial film in the first contact hole;
- forming a second layer on the first layer and the first contact hole after burying;
- forming a second contact hole reaching the sacrificial film in the second layer;
- removing the sacrificial film from the first contact hole via the second contact hole;
- and
- providing a contact electrode in the first contact hole and the second contact hole, wherein forming the first layer includes stacking alternately a plurality of conductive layers and a plurality of insulating layers.
5 more elements
Dependencies are inferred from the claim text.